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IKB01N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
*
Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 1A Eoff 0.09mJ Tj 150C Marking K01H1202 Package P-TO-220-3-45
2 nd
G
E
*
P-TO-220-3-45
* * *
Type IKB01N120H2 Maximum Ratings Parameter
Symbol VCE IC
Value 1200 3.2 1.3
Unit V A
Collector-emitter voltage Triangular collector current TC = 25C, f = 140kHz TC = 100C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Gate-emitter voltage Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1)
ICpul s IF
3.5 3.5
3.2 1.3 VGE Ptot Tj , Tstg 20 28 -40...+150 220 V W C
2
J-STD-020 and JESD-022 1 Rev. 2.3 May 06
Power Semiconductors
IKB01N120H2
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, Junction - case Thermal resistance, junction - ambient
1)
Symbol RthJC RthJCD RthJA
Conditions
Max. Value 4.5 11 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 3 00 A VCE(sat) V G E = 15 V , I C = 1 A T j =2 5 C T j =1 5 0 C V G E = 10 V , I C = 1 A, T j =2 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 A , V C E = V G E V C E = 12 0 0V , V G E = 0V T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0, I F = 0 .5 A T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =1 A V G E = 15 V 7 nH 91.6 9.8 3.4 8.6 nC pF IGES gfs V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 1 A 2.0 1.75 0.75 2.5 40 nA S 20 80 V 2.1 2.2 2.5 2.4 3 2.8 3.9 A 1200 V Symbol Conditions Value min. Typ. max. Unit
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air.
1)
2
Power Semiconductors
2
Rev. 2.3
May 06
IKB01N120H2
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 80 0 V, I C = 1 A, V G E = 15 V /0 V , R G = 24 1 , 2) L =1 8 0n H, 2) C = 4 0p F Energy losses include 3) "tail" and diode reverse recovery. T j =2 5 C , V R = 8 00 V , I F = 1 A, R G = 24 1 13 6.3 370 28 0.08 0.06 0.14 mJ ns Symbol Conditions Value min. Typ. max. Unit
Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode current slope Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm diF/dt d i r r /d t 83 89 2.5 289 178 ns C A A/s
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 80 0 V, I C = 1 A, V G E = 15 V /0 V , R G = 24 1 , 2) L =1 8 0n H, 2) C = 4 0p F Energy losses include 4) "tail" and diode reverse recovery. T j =1 5 0 C V R = 8 00 V , I F = 1 A, R G = 24 1 12 8.9 450 43 0.11 0.09 0.2 mJ ns Symbol Conditions Value min. Typ. max. Unit
Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode current slope Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm diF/dt d i r r /d t 213 180 2.7 240 135 ns C A A/s
2) 4)
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E Commutation diode from device IKP01N120H2 3 Rev. 2.3 May 06
Power Semiconductors
IKB01N120H2
Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Eoff V C C = 80 0 V, I C = 1 A, V G E = 15 V /0 V , R G = 24 1 , C r =1 nF T j =2 5 C T j =1 5 0 C 0.02 0.044 2)
Symbol
Conditions
Value min. typ. max.
Unit
mJ
Power Semiconductors
4
Rev. 2.3
May 06
IKB01N120H2
5A
10A
Ic
IC, COLLECTOR CURRENT
1A
t p =1s
4A
2s 5s
IC, COLLECTOR CURRENT
3A TC=80C 2A TC=110C
20s 0,1A 50s
1A
Ic
100Hz 1kHz 10kHz 100kHz
200s ,01A DC 1V 10V 100V 1000V
0A 10Hz
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 241)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
30W
4A
25W
20W
15W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
3A
2A
10W
1A
5W
0W 25C
50C
75C
100C
125C
150C
0A 25C
50C
75C
100C
125C
150C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
5
Rev. 2.3
May 06
IKB01N120H2
5A
5A
4A
4A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
VGE=15V 3A 12V 10V 8V 6V
VGE=15V 3A 12V 10V 8V 6V
2A
2A
1A
1A
0A 0V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
5A
4V
4A
Tj=+150C Tj=+25C
IC, COLLECTOR CURRENT
3V
IC=2A
3A
IC=1A 2V IC=0.5A 1V
2A
1A
0A 3V
5V
7V
9V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev. 2.3
May 06
IKB01N120H2
1000ns
td(off)
td(off) 100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns tf
tf
10ns
td(on)
td(on) 10ns tr 0A 1A 2A
tr 1ns 50
100
150
200
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 241, dynamic test circuit in Fig.E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 1A, dynamic test circuit in Fig.E)
6V
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5V
t, SWITCHING TIMES
100ns
4V
tf
3V
max. typ. min.
2V
td(on) 10ns tr 50C 100C 150C
1V
0C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 1A, RG = 241, dynamic test circuit in Fig.E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.03mA)
Power Semiconductors
7
Rev. 2.3
May 06
IKB01N120H2
0.6mJ
1
) Eon and Ets include losses due to diode recovery.
0.25mJ
Ets
1
1
) Eon and Ets include losses due to diode recovery.
Ets
1
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0.20mJ
0.4mJ Eoff
0.15mJ Eon 0.10mJ
1
Eon 0.2mJ
1
0.0mJ 0A 1A 2A 3A
Eoff 0.05mJ 50 100 150 200
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 241, dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 1A, dynamic test circuit in Fig.E )
0.25mJ
1
E, SWITCHING ENERGY LOSSES
0.20mJ
Ets
1
Eoff, TURN OFF SWITCHING ENERGY LOSS
) Eon and Ets include losses due to diode recovery.
0.06mJ IC=1A, TJ=150C
0.04mJ IC=1A, TJ=25C IC=0.3A, TJ=150C 0.02mJ
0.15mJ
1
0.10mJ
Eon
0.05mJ
Eoff
IC=0.3A, TJ=25C 0.00mJ 0V/us
0.00mJ
-40C
25C
100C
150C
1000V/us
2000V/us
3000V/us
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 1A, RG = 241, dynamic test circuit in Fig.E )
dv/dt, VOLTAGE SLOPE Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig. E)
Power Semiconductors
8
Rev. 2.3
May 06
IKB01N120H2
20V
D=0.5
ZthJC, TRANSIENT THERMAL IMPEDANCE
0.1 0.05 0.02 10 K/W 0.01
-1
R,(K/W) 2.5069 1.1603 0.8327
R1
, (s) 0.00066 0.00021 0.00426
R2
VGE, GATE-EMITTER VOLTAGE
10 K/W
0
0.2
15V
UCE=240V
10V
UCE=960V
5V
single pulse 10 K/W 1s
-2
C 1 = 1 / R 1 C 2 = 2 /R 2
10s
100s
1ms
10ms
100ms
0V 0nC
5nC
10nC
15nC
tp, PULSE WIDTH Figure 17. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
QGE, GATE CHARGE Figure 18. Typical gate charge (IC = 1A)
1000V 1.0A
VCE, COLLECTOR-EMITTER VOLTAGE
100pF
Ciss
800V
600V
0.6A
400V
0.4A
10pF
Coss
0.2A 200V 0.0A 0V 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Crss 0V 10V 20V 30V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 19. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
tp, PULSE WIDTH Figure 20. Typical turn off behavior, hard switching (VGE=15/0V, RG=220, Tj = 150C, Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.3
May 06
ICE COLLECTOR CURRENT
0.8A
C, CAPACITANCE
IKB01N120H2
1000V
ZthJC, TRANSIENT THERMAL RESISTANCE
1.0A
VCE, COLLECTOR-EMITTER VOLTAGE
10 K/W D=0.5
1
800V
ICE COLLECTOR CURRENT
0.8A 600V
0.6A
0.2 0.1
0
R,(K/W) 3.668 6.401 0.81
0.05 0.02 0.01 single pulse
R1
, (s) 9.29E-04 2.14E-04 4.81E-03
R2
400V
0.4A
10 K/W
C1=1/R 1 C 2= 2/R 2
0.2A 200V 0.0A 0V 0.0 0.4 0.8 1.2 1.6 2.0
10s
100s
1ms
10ms
tp, PULSE WIDTH Figure 21. Typical turn off behavior, soft switching (VGE=15/0V, RG=220, Tj = 150C, Dynamic test circuit in Figure E)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
200uC 210ns
trr, REVERSE RECOVERY TIME
180ns
TJ=150C
Qrr, REVERSE RECOVERY CHARGE
180uC
TJ=150C
160uC
150ns
120ns
140uC
90ns
TJ=25C
120uC
60ns
100uC
TJ=25C
30ns
100Ohm
200Ohm
300Ohm
80uC
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE Figure 23. Typical reverse recovery time as a function of diode current slope VR=800V, IF=3A, Dynamic test circuit in Figure E)
RG, GATE RESISTANCE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev. 2.3
May 06
IKB01N120H2
4.0A -140A/us
3.5A
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
TJ=150C
T J =150C
3.0A
-160A/us
-180A/us
T J =25C
2.5A
-200A/us
TJ=25C
100O hm
200O hm
300O hm
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E)
3.0V
RG, GATE RESISTANCE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E)
IF=1A
4A
T J =150C
2.5V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
IF=0.5A 2.0V IF=0.25A
2A
T J =25C
1.5V
0A 0V
1.0V
1V 2V 3V 4V 5V
-50C
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
11
Rev. 2.3
May 06
IKB01N120H2
P-TO220-3-45
Power Semiconductors
12
Rev. 2.3
May 06
IKB01N120H2
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
1/2 L oo DUT (Diode) VDC RG DUT (IGBT) L C Cr
1/2 L
Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor Cr = 1nF (only for ZVT switching) Figure B. Definition of switching losses
Power Semiconductors
13
Rev. 2.3
May 06
IKB01N120H2
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 5/17/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
14
Rev. 2.3
May 06

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